COMPUTATIONAL STUDY OF SPIN THIN FILM TRANSISTOR BASED ON TRANSITION M¬ETALS DOPED TWO-DIMENSIONAL TIN OXIDE

I have chosen to investigate a material which will be more suitable to make a transparent Spin TFT for future smart devices. SnO is considered most suitable for this purpose because; it is transparent for visible light and 2D to make smart TFT. Transition Metals (TM) are doped in SnO to make its Diluted Magnetic Semiconductor for Spin Polarization purpose. FM and AFM calculations are in progress to discover Ferromagnetic and Anti-Ferromagnetic behavior of TM doped SnO. Step by step changing of TM and its doping concentration in SnO will be helpful to find the required material. After getting a desired material we will apply NEGF (Non Equilibrium Green Function) in ADF-BAND to calculate its Transport Properties.

Leave a Comment

Your email address will not be published. Required fields are marked *